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Enhanced 600-Vcall MOSFETs Tailored for Artificial Intelligence and Telecommunication Infrastructure

Enhanced server applications benefit from the efficiency, miniaturization, and heat management provided by high-performance MOSFETs that have exceptionally low electrical resistance.

Enhanced Superjunction 600-V MOSFETs Tailored for Artificial Intelligence and Telecommunication...
Enhanced Superjunction 600-V MOSFETs Tailored for Artificial Intelligence and Telecommunication Equipment

Enhanced 600-Vcall MOSFETs Tailored for Artificial Intelligence and Telecommunication Infrastructure

WeEn Semiconductors Unveils 600-V Superjunction MOSFET for AI and Telecom Applications

WeEn Semiconductors has introduced a new 600-V superjunction MOSFET, the WSJ2M60R065DTL, designed to meet the demands of modern computing and telecom server applications.

Key features of the WSJ2M60R065DTL include a maximum current rating of 50 A, a low on-resistance (RDS(ON)) of 65 mΩ, and a typical blocking voltage near 700 V. The MOSFET's design, incorporating superjunction technology, enables high voltage blocking and efficient power switching.

The MOSFET's stable resistance performance is a unique selling point that sets it apart in the market. This stability ensures a steady and predictable R across a range of current and temperature conditions, contributing to its reliability and longevity in use.

The WSJ2M60R065DTL is particularly suitable for zero-voltage-switching (ZVS) applications in soft-switching topologies. It delivers high efficiency while handling irregular operating conditions, making it an ideal choice for power supply units for AI servers and telecom infrastructure.

In these applications, efficient, high-voltage power conversion and management are critical. The WSJ2M60R065DTL supports efficient power delivery to AI accelerators and high-performance processors, helping to reduce energy losses and heat dissipation in these demanding environments.

The MOSFET's stable resistance performance also allows it to navigate DC distribution systems effectively. Additionally, the integrated fine-tuned forward recovery diode (FRD) ensures excellent reverse-recovery robustness and balanced high-temperature performance.

The WSJ2M60R065DTL's stable resistance performance is a testament to the advanced technology used in its development. WeEn Semiconductors has leveraged its latest generation superjunction technology to create a MOSFET that combines an industry-leading on-resistance (R) and figure of merit (R×Q) with an ultra-compact TOLL package.

In conclusion, the WSJ2M60R065DTL MOSFET is a significant contribution to the development of clean tech innovations powering a sustainable future. Its stable resistance performance, high current capacity, and low conduction losses make it a valuable asset in the design and development of seamless ambient systems, computing and telecom server applications, and AI and high-performance processing.

Artificial-intelligence (AI) servers and telecom infrastructure can benefit significantly from the WSJ2M60R065DTL MOSFET, as it delivers high efficiency while handling irregular operating conditions.

The WSJ2M60R065DTL supports efficient power delivery to AI accelerators and high-performance processors, contributing to reduced energy losses and heat dissipation in these demanding environments, a key feature that underscores its relevance in artificial-intelligence applications.

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